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Performance comparison of III–V//Si and III–V//InGaAs ...
A DJ solar cell bonding with Si cell can result in a higher V oc, while bonding …
Suitability of InP window layers for InGaAs solar cells
The high efficiency and better radiation performance of the solar cell structures based on …
Performance comparison of III–V//Si and III–V//InGaAs ...
A DJ solar cell bonding with Si cell can result in a higher V oc, while bonding with InGaAs cell can achieve a higher short-circuit current. This study demonstrated the great …
Comparison of various InGaAs-based solar cells for concentrated ...
InGaAs lattice matched to InP is a promising material for bottom sub-cell in a 4-junction solar cell designed for concentrated photovoltaics applications. Here we compare the …
Suitability of InP window layers for InGaAs solar cells
The high efficiency and better radiation performance of the solar cell structures based on InGaAs make them suitable for space power applications. This work investigates the suitability of …
Development of InGaAs solar cells for >44% efficient transfer …
In this work, we describe the development of InGaAs solar cells, designed …
Epitaxy and characterization of InP/InGaAs tandem solar cells …
Lumb et al. reported a grown and optimized InGaAs solar cell lattice matched to InP, for use as a fourth junction in high efficiency InGaP/GaAs/InGaAsNSb triple junction solar cell. The first …
Bonded InGaAs cells for microsystems enabled photovoltaics
InGaAs solar cells bonded to a Si substrate are demonstrated. These cells are 160 μm to 1300 …
Epitaxy and characterization of InP/InGaAs tandem solar cells …
Lumb et al. reported a grown and optimized InGaAs solar cell lattice matched to InP, for use as …
Enhanced Conversion Efficiency of III–V Triple-junction Solar Cells ...
A conversion efficiency of 33.2% for InGaP/InGaAs/Ge triple-junction solar cells has been achieved at the GQD concentration of 1.2 mg/ml, corresponding to a 35% …
Conversion Efficiency of 45.0% in InGaP/InGaAs/Ge Triple-Junction Solar …
Optical wireless power transmission systems are attracting attention as a new power transmission technology because they can supply power wirelessly over long distances. …
High efficiency thin film GaInP/GaAs/InGaAs inverted …
In this paper, GaInP/GaAs/InGaAs triple junction solar cells with a band-gap of …
Comparison of various InGaAs-based solar cells for concentrated ...
InGaAs lattice matched to InP is a promising material for bottom sub-cell in a 4 …
Solar Energy Materials and Solar Cells
In this paper, we have fabricated InGaP/InGaAs/Ge solar cells with different size and shape with record V o c of 2.39 V and 2.28 V for 0.25 mm 2 and 0.04 mm 2 cells respectively, indicating …
Performance assessment of a triple-junction solar cell with 1.0 eV ...
The solar cells, grown by molecular-beam epitaxy, achieve 19.1% efficiency …
31% European InGaP/GaAs/InGaAs Solar Cells for Space Application
From the standard InGaP/InGaAs/Ge triple junction solar cells with AM0 efficiency >29%, research is addressing the development of more than three junction devices and the …
On-Orbit Performance Degradation Prediction and Physical …
The current work analyzes the on-orbit performance degradation and physical properties of triple-junction InGaP2/InGaAs/Ge solar cells based on the Gaofen-3 (GF-3) …
High‐Efficiency Flexible GaAs/InGaAs Dual‐Junction Solar Cells ...
Flexible GaAs/InGaAs dual-junction solar cells with a size of 1 × 1 mm 2 were fabricated using …
High‐Efficiency Flexible GaAs/InGaAs Dual‐Junction Solar Cells ...
a) Illuminated J–V characteristics of the two single‐junction cells and the GaAs/InGaAs dual‐junction cell measured under AM 1.5G solar illumination at 100 mW cm⁻².
High‐Efficiency Flexible GaAs/InGaAs Dual‐Junction Solar Cells ...
Flexible GaAs/InGaAs dual-junction solar cells with a size of 1 × 1 mm 2 were fabricated using conventional photolithography, mesa isolation etching, AuZn(80 nm)/Ni(15 nm)/Au(200 nm) …
Performance assessment of a triple-junction solar cell with 1.0 eV ...
The solar cells, grown by molecular-beam epitaxy, achieve 19.1% efficiency at AM1.5G spectrum, 2.51 V open-circuit voltage, and 9.86 mA/cm2 short-circuit current density. …
High efficiency thin film GaInP/GaAs/InGaAs inverted metamorphic …
In this paper, GaInP/GaAs/InGaAs triple junction solar cells with a band-gap of 1.9/1.42/1.05 eV are researched, with thicknesses of 3 μm, 1 μm, and 3 μm, respectively, to …
High-efficiency GaInP∕GaAs∕InGaAs triple-junction solar cells …
The authors demonstrate a thin, Ge-free III–V semiconductor triple-junction solar cell device structure that achieved 33.8%, 30.6%, and 38.9% efficiencies under the standard …
Analytical modelling, simulation and comparative study of multi ...
The I–V and P–V characteristics of 1 cm 2 (GaInP 2 /InGaAs/Ge) multi-junction solar cell were investigated in MATLAB/Simulink. The (1 cm 2) area PV cell is a commercial …
Strain-balanced GaAsP/InGaAs quantum well solar cells
A strain-balance multiquantum well (MQW) approach to enhance the GaAs solar cell efficiency is reported. Using a p-i-n diode structure, the strain-balanced GaAsP/InGaAs MQW is grown on …
Bonded InGaAs cells for microsystems enabled photovoltaics
InGaAs solar cells bonded to a Si substrate are demonstrated. These cells are 160 μm to 1300 μm in diameter and designed for integration in microsystems enabled photovoltaic systems. …
(PDF) Miniaturization of InGaP/InGaAs/Ge solar cells for micro ...
Miniaturization of InGaP/InGaAs/Ge solar cells for microconcentrator photovoltaics. Progress in Photovoltaics, Wiley, 2021, 10.1002/pip.3421 . hal-03219465
Improved radiation resistance of flexible GaInP/GaAs dual junction ...
During space missions, the high energy particles (electron, proton and heavy ions) in the space environment interact with solar cells and introduce displacement damages …
Development of InGaAs solar cells for >44% efficient transfer …
In this work, we describe the development of InGaAs solar cells, designed to harvest long wavelength photons when stacked in tandem with a high efficiency …